Title :
A 55-V, 0.2-m Omega -cm/sup 2/ vertical trench power MOSFET
Author_Institution :
Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
Experimental results that demonstrate trench power MOSFETs with a specific on-state resistance of 0.2 m Omega -cm/sup 2/ and capable of sustaining 55 V across drain-source terminals in the off state are discussed. This performance was achieved by using an improved silicon trench processing technology. The forward conductivity reported is the highest ever obtained for a silicon power device.<>
Keywords :
insulated gate field effect transistors; power transistors; semiconductor technology; 55 V; UMOS; VMOS; forward conductivity; low voltage power MOSFET technology; specific on-state resistance; trench processing technology; vertical trench power MOSFET; Breakdown voltage; Conductivity; MOSFET circuits; Power MOSFET; Power semiconductor devices; Power semiconductor switches; Protection; Silicon; Surface cleaning; Wet etching;
Journal_Title :
Electron Device Letters, IEEE
