Title :
Comparison of Scaling of In-Plane and Perpendicular Spin Transfer Switching Technologies by Micromagnetic Simulation
Author :
Apalkov, Dmytro ; Watts, Steven ; Driskill-Smith, Alexander ; Chen, Eugene ; Diao, Zhitao ; Nikitin, Vladimir
Author_Institution :
Grandis Inc., Milpitas, CA, USA
fDate :
6/1/2010 12:00:00 AM
Abstract :
Spin transfer torque switching-basis of operation of innovative memory technology-STT-RAM (spin transfer torque memory) has been actively studied in the recent years with two prevalent technologies emerging at fast pace: in-plane and perpendicular. The crucial question for future development is which technology provides better scaling to smaller sizes. The present work provides evaluation of scalability of these two approaches based on micromagnetic modeling.
Keywords :
magnetic storage; magnetoelectronics; micromagnetics; random-access storage; switching; in-plane spin transfer switching technology; innovative memory technology; micromagnetic modeling; micromagnetic simulation; perpendicular spin transfer switching technology; spin transfer torque random access memory; Anisotropic magnetoresistance; Current density; Damping; Magnetization; Micromagnetics; Scalability; Shape; Thermal stability; Torque; Voltage; Magnetic tunneling junction; spin transfer torque random access memory (STT-RAM); spintronics;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2041330
