Title :
Reduction of backgating in GaAs SISFET´s with a low-temperature buffer
Author :
Solomon, Paul M. ; Wright, Steven L. ; Canora, F.J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1991 12:00:00 AM
Abstract :
The use of a low-temperature molecular beam epitaxy (MBE)-grown buffer layer to reduce backgating in GaAs/AlGaAs semiconductor-insulator-semiconductor FETs (SISFETs) is discussed. Comparison with a control wafer having no low-temperature buffer (LTB) reveals an improvement in backgating threshold voltage by a factor of 3, improvement in output conductance and short-channel characteristics, and no significant change in threshold voltage, threshold-voltage spread, and microwave characteristics. The FETs with LTB exhibited increased sensitivity, at 80 K, to trapping of hot electrons.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; insulated gate field effect transistors; molecular beam epitaxial growth; semiconductor-insulator-semiconductor structures; 80 K; GaAs-AlGaAs; MBE; SISFETs; backgating reductions; backgating threshold voltage; low-temperature buffer; low-temperature molecular beam epitaxy; microwave characteristics; output conductance; semiconductor-insulator-semiconductor FETs; semiconductors; short-channel characteristics; threshold voltage; threshold-voltage spread; trapping of hot electrons; Buffer layers; Electrons; FETs; Gallium arsenide; HEMTs; Heat treatment; MODFETs; Molecular beam epitaxial growth; Substrates; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
