• DocumentCode
    1498128
  • Title

    Design of single-gated multiple-mode power semiconductor devices

  • Author

    Stark, B.H. ; Palmer, P.R.

  • Author_Institution
    Dept. of Eng. Sci., Oxford Univ., UK
  • Volume
    148
  • Issue
    2
  • fYear
    2001
  • fDate
    4/1/2001 12:00:00 AM
  • Firstpage
    64
  • Lastpage
    70
  • Abstract
    A new method is used to design a power semiconductor device which combines IGBT switching and thyristor on-state characteristics. A single gate signal controls the switching and triggers the transitions between the IGBT and thyristor modes of operation. The design of single-gated devices with multiple modes and aspects of their switching behaviour are discussed
  • Keywords
    insulated gate bipolar transistors; power semiconductor devices; thyristors; IGBT switching; multiple modes; single-gated multiple-mode power semiconductor devices; switching behaviour; thyristor modes; thyristor on-state characteristics;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2409
  • Type

    jour

  • DOI
    10.1049/ip-cds:20010167
  • Filename
    926410
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498128