Increased resistance in p-type poly-Si resistors by thermal anneal reduction interface charge

Author

Rodder, Mark

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

12

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

160

Lastpage

162

Abstract

The effect of thermal annealing on characteristics of p-type poly-Si thin-film resistors was investigated. A significant increase was observed as the source/drain anneal temperature or anneal time was increased. The increased resistance is due to a reduction in current component arising from field-enhanced current via grain-boundary trap states at the drain end of the resistor. The reduction is this field-enhanced current arises primarily from a reduction of positive charge density at the top and bottom oxide/poly-Si interfaces of the thin-film resistor (and thus a reduction in the magnitude of the drain electric field) with increased annealing temperature and time.<>

Keywords

annealing; elemental semiconductors; grain boundaries; semiconductor-insulator boundaries; silicon; thin film resistors; anneal time; current component; drain electric field; field-enhanced current; grain-boundary trap states; interface charge; p-type polysilicon thin-film resistors; positive charge density; source/drain anneal temperature; thermal anneal reduction; Amorphous silicon; Annealing; MOSFET circuits; Random access memory; Resistors; Semiconductor films; Sputtering; Temperature; Thermal resistance; Transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75750

Filename

75750