Graphene Magnetic Field Sensors

Author

Pisana, Simone ; Braganca, Patrick M. ; Marinero, Ernesto E. ; Gurney, Bruce A.

Author_Institution

San Jose Res. Center, Hitachi Global Storage Technol., San Jose, CA, USA

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1910

Lastpage

1913

Abstract

Graphene extraordinary magnetoresistance (EMR) devices have been fabricated and characterized in varying magnetic fields at room temperature. The atomic thickness, high carrier mobility and high current carrying capabilities of graphene are ideally suited for the detection of nanoscale sized magnetic domains. The device sensitivity can reach 10 mV/Oe, larger than state of the art InAs 2DEG devices of comparable size and can be tuned by the electric field effect via a back gate or by imposing a biasing magnetic field.

Keywords

carrier mobility; enhanced magnetoresistance; graphene; magnetic domains; magnetic field measurement; magnetic sensors; magnetoresistive devices; nanomagnetics; 2DEG devices; C; atomic thickness; carrier mobility; current carrying capabilities; electric field effect; graphene extraordinary magnetoresistance devices; graphene magnetic field sensors; nanoscale sized magnetic domains; room temperature; Biosensors; Extraordinary magnetoresistance; Giant magnetoresistance; Magnetic domains; Magnetic fields; Magnetic materials; Magnetic sensors; Sensor phenomena and characterization; Spatial resolution; Tunneling magnetoresistance; Extraordinary magnetoresistance (EMR); graphene; magnetic sensors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2041048

Filename

5467420