Characteristics of LPCVD WSi/sub 2//n-Si Schottky contacts

Author

Shenai, Krishna

Author_Institution

Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA

Volume

12

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

169

Lastpage

171

Abstract

Detailed current-voltage and capacitance-voltage characteristics of low-pressure chemical vapor deposited (LPCVD) WSi/sub 2//n-Si Schottky contacts are reported in the temperature range of 21 to 170 degrees C. The diode ideality factor n was found to decrease from a value of 1.46 to 1.15 as temperature was increased. Schottky barrier height phi /sub B/, on the other hand, was found to increase from 0.72 to 0.86 V with temperature. These results suggest that diode characteristics are affected by surface and bulk effects, especially at lower temperatures. High-resolution transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy analyses revealed isolated regions of oxynitride at the silicide/silicon interface that are predominantly located where silicide grain boundaries intersect the silicon surface.<>

Keywords

CVD coatings; Schottky effect; X-ray photoelectron spectra; elemental semiconductors; semiconductor-metal boundaries; silicon; transmission electron microscope examination of materials; tungsten compounds; 21 to 170 degC; LPCVD; Schottky barrier height; Schottky contacts; Si; WSi/sub 2/-Si; X-ray photoelectron spectroscopy; capacitance-voltage characteristics; current-voltage characteristics; diode ideality factor; grain boundaries; isolated regions; transmission electron microscopy; Capacitance-voltage characteristics; Chemicals; Photoelectron microscopy; Schottky barriers; Schottky diodes; Silicides; Silicon; Spectroscopy; Temperature distribution; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75753

Filename

75753