A lifetime prediction method for oxide electron trap damage created during hot-electron stressing of n-MOS transistors

Author

Doyle, Brian S. ; Mistry, Kaizad R.

Author_Institution

Digital Equipment Corp., Hudson, MA, USA

Volume

12

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

178

Lastpage

180

Abstract

Electron trap creation under conditions of hot-electron stress (i.e., stress at V/sub d/=V/sub g/) is examined. It is shown that a relationship exists linking lifetime to the injected gate current and drain current, offering a lifetime prediction method for these types of traps. Comparing this type of damage to interface trap (N/sub it/) creation, it is found that larger energies (approximately 1.5 times that for N/sub it/) are required to generate this defect. It is shown that an extrapolation technique can be used to obtain gate currents at working circuit voltages, extending the prediction of lifetimes for oxide trap creation to low voltages.<>

Keywords

carrier lifetime; electron traps; hot carriers; insulated gate field effect transistors; NMOS transistors; circuit voltages; drain current; extrapolation technique; hot-electron stressing; injected gate current; lifetime prediction method; oxide electron trap damage; AC generators; Circuits; Electron traps; Helium; Hot carrier effects; Joining processes; MOSFETs; Prediction methods; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.75756

Filename

75756