A Study on the Sign Inversion Behavior of Organic Magnetoresistance

Author

Tianyou Zhang ; Junqing Zhao ; Xingwu Yan ; Qiming Peng ; Gang Fu

Author_Institution

Sch. of Sci., Shandong Jianzhu Univ., Jinan, China

Volume

34

Issue

3

fYear

2013

fDate

Mar-13

Firstpage

450

Lastpage

452

Abstract

We study the sign inversion behavior of organic magnetoresistance (OMR) in organic thin-film devices, to elucidate the mechanisms governing the well-known OMR phenomenon. From the combination of a percolation theory with a magnetic field modulated bipolaron mechanism, we derive a model that accounts for OMR sign inversion (OMRSI) behavior. It exhibits how an applied magnetic field acts together with other factors (temperature, bias, and film thickness) on the device current. Under the framework of space-charge-limited current, we reproduce two kinds of OMRSI behavior. In the end, we discuss the influence of hyperfine field on OMRSI lines.

Keywords

magnetoresistance; organic semiconductors; semiconductor thin films; OMR sign inversion behavior; hyperfine field; magnetic field modulated bipolaron mechanism; organic magnetoresistance; organic thin-film devices; percolation theory; space-charge-limited current; Magnetic devices; Magnetic domains; Magnetic semiconductors; Magnetoresistance; Magnetosphere; Organic light emitting diodes; Saturation magnetization; Hopping transport; organic magnetoresistance (OMR); percolation theory; space-charge-limited current (SCLC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2237540

Filename

6414593