DocumentCode
1498478
Title
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al 0.48As photodiodes on GaAs substrates
Author
Jang, J.H. ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Fay, P. ; Adesida, I.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
37
Issue
11
fYear
2001
fDate
5/24/2001 12:00:00 AM
Firstpage
707
Lastpage
708
Abstract
The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55 μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer
Keywords
III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; optical fabrication; optical testing; p-i-n photodiodes; p-n heterojunctions; 1.55 mum; 38 GHz; 5 V; 500 pA; GaAs; GaAs substrates; In0.53Ga0.47As-InAlGaAs-In0.52Al 0.48As; In0.53Ga0.47As/InAlGaAs/In0.52Al 0.48As photodiodes; InAlAs; InGaAlAs; InGaAs; InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes; bandwidth; dark current; design; digitally graded bandgap layer; fabrication; large bandgap drift region; long wavelength metamorphic double heterojunction; metamorphic double heterojunction photodiodes; performance; responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20010474
Filename
926456
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