Title :
Long wavelength metamorphic double heterojunction In0.53Ga0.47As/InAlGaAs/In0.52Al 0.48As photodiodes on GaAs substrates
Author :
Jang, J.H. ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Fay, P. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
5/24/2001 12:00:00 AM
Abstract :
The design and performance of metamorphic InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes fabricated on GaAs substrates are presented. A low dark current of 500 pA at 5 V bias, a responsivity of 0.6 A/W, and a -3 dB bandwidth of 38 GHz for 1.55 μm light have been achieved by using a large bandgap drift region in conjunction with a digitally graded bandgap layer
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; optical fabrication; optical testing; p-i-n photodiodes; p-n heterojunctions; 1.55 mum; 38 GHz; 5 V; 500 pA; GaAs; GaAs substrates; In0.53Ga0.47As-InAlGaAs-In0.52Al 0.48As; In0.53Ga0.47As/InAlGaAs/In0.52Al 0.48As photodiodes; InAlAs; InGaAlAs; InGaAs; InGaAs/InGaAlAs/InAlAs double heterojunction photodiodes; bandwidth; dark current; design; digitally graded bandgap layer; fabrication; large bandgap drift region; long wavelength metamorphic double heterojunction; metamorphic double heterojunction photodiodes; performance; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010474
