Title :
First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide
Author :
Rotter, T. ; Mistele, D. ; Stemmer, J. ; Seyboth, M. ; Schwegler, V. ; Paprotta, S. ; Fedler, F. ; Klausing, H. ; Semchinova, O.K. ; Aderhold, J. ; Graul, J.
Author_Institution :
Lab. fur Informationstechnologie, Hannover Univ., Germany
fDate :
5/24/2001 12:00:00 AM
Abstract :
The DC characteristics of an AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor are presented. The unique feature of this device is its oxide, which is formed photoelectrochemically at room temperature. For a device with a gate length of 2 μm state-of-the-art values of 540 mA/mm and 62 mS/mm were obtained for the drain current and transconductance, respectively
Keywords :
III-V semiconductors; MOSFET; aluminium compounds; anodisation; gallium compounds; photoelectrochemistry; semiconductor device measurement; wide band gap semiconductors; 2 mum; 62 mS/mm; AlGaN-GaN; AlGaN/GaN MOS heterostructure FET; AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor; DC characteristics; drain current; gate length; photoanodic oxide; room temperature photoelectrochemical formation; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010484
