• DocumentCode
    1498535
  • Title

    New ratio method for effective channel length and threshold voltage extraction in MOS transistors

  • Author

    Cretu, B. ; Boutchacha, T. ; Ghibaudo, G. ; Balestra, F.

  • Author_Institution
    Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
  • Volume
    37
  • Issue
    11
  • fYear
    2001
  • fDate
    5/24/2001 12:00:00 AM
  • Firstpage
    717
  • Lastpage
    719
  • Abstract
    A new `ratio´ method for effective channel length and threshold voltage extraction in MOS transistors is proposed. The method, which relies on the same function as that used in the well known shift and ratio procedure, enables the effective channel length and threshold voltage difference to be extracted from simple linear regression applied to a short versus long channel correlation plot of the function Y(Vg)=Id√gm (Id being the drain current and gm the transconductance). This method has successfully been applied to 0.18-0.1 μm CMOS technologies
  • Keywords
    CMOS integrated circuits; MOSFET; length measurement; semiconductor device measurement; voltage measurement; 0.18 to 0.1 mum; CMOS technologies; MOS transistors; drain current; effective channel length; linear regression; ratio method; short versus long channel correlation plot; threshold voltage; transconductance);
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010467
  • Filename
    926463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498535