DocumentCode :
1498607
Title :
CMOS multiplier based on the relationship between drain current and inversion charge
Author :
Machado, M.B. ; Cunha, A.I.A. ; de Lacerda, L.A. ; Galup-Montoro, Carlos ; Schneider, M.C.
Author_Institution :
CEFET-RS/UNED Charqueadas, Charqueadas, Brazil
Volume :
3
Issue :
5
fYear :
2009
fDate :
10/1/2009 12:00:00 AM
Firstpage :
239
Lastpage :
247
Abstract :
The authors propose a four-quadrant multiplier based on a core cell that exploits the general relationship between the saturation current of an MOS transistor and the source inversion charge density, valid from weak to strong inversion. The advantages of the proposed circuit are simplicity, low distortion and feasibility of low-voltage operation. Experimental results in a 0.35 mum CMOS prototype indicate 1 mA consumption for 1 MHz bandwidth, and distortion level below 1 for an input current of 80 of the full-scale range. The multiplier core area is around 10 000 m2.
Keywords :
CMOS analogue integrated circuits; MOSFET; analogue multipliers; low-power electronics; CMOS analogue multiplier; MOS transistor; bandwidth 1 MHz; current 1 mA; drain current; four-quadrant multiplier; low-voltage operation; size 0.35 mum; source inversion charge density;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2008.0287
Filename :
5285987
Link To Document :
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