DocumentCode
1498624
Title
Influence of User-Controlled Parameters in Alpha Particle-Induced Single-Event Error Rates in Commercial SRAM Cells
Author
Chatterjee, Indranil ; Bhuva, Bharat L. ; Wen, Shi-Jie ; Wong, Richard
Author_Institution
Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN, USA
Volume
59
Issue
4
fYear
2012
Firstpage
872
Lastpage
879
Abstract
Alpha particles are a critical reliability problem for advanced technologies. The critical charge (Qcrit) required to upset an SRAM cell being small, SRAMs are extremely vulnerable to the low level of ionization produced by alpha particles. This paper reports extensive tests over a wide range of technology nodes on CMOS SRAMs to study the influence of various user-controlled parameters such as operating voltage, data pattern, operating frequency and operational-mode on alpha particle induced single-event upsets rates.
Keywords
Alpha particles; Capacitance; Error analysis; Layout; Random access memory; Transistors; Visualization; Alpha particle; SER; SRAM; multiple bit upset (MBU); single bit upset (SBU); soft error;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2188839
Filename
6186727
Link To Document