• DocumentCode
    1498639
  • Title

    Fast 1V bootstrapped inverter suitable for standard CMOS technologies

  • Author

    Moisiadis, Y. ; Bouras, I. ; Efthymiou, A. ; Papadas, C.

  • Author_Institution
    ISD, Athens, Greece
  • Volume
    35
  • Issue
    2
  • fYear
    1999
  • fDate
    1/21/1999 12:00:00 AM
  • Firstpage
    109
  • Lastpage
    111
  • Abstract
    The authors propose a novel low-voltage bootstrapped inverter, designed in a standard high VT 0.35 μm CMOS technology. To enhance the switching speed of a CMOS inverter at low-voltage operation, an NMOS device is used in the pull-up section. A bootstrapping scheme is used to avoid the VTN reduction of the output swing
  • Keywords
    CMOS logic circuits; bootstrap circuits; logic gates; low-power electronics; 0.35 micron; 1 V; low-voltage bootstrapped inverter; pull-up section; standard CMOS technologies; switching speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990092
  • Filename
    757984
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498639