The Influence of the Thermal Effect on CdSe/ZnS Quantum Dots in Light-Emitting Diodes

Author

Chen, Kuo-Ju ; Chen, Hsin-Chu ; Shih, Min-Hsiung ; Wang, Chao-Hsun ; Kuo, Ming-Yen ; Yang, Yi-Chun ; Lin, Chien-Chung ; Kuo, Hao-Chung

Author_Institution

Dept. of Photonic, Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

30

Issue

14

fYear

2012

fDate

7/15/2012 12:00:00 AM

Firstpage

2256

Lastpage

2261

Abstract

This study investigates the effect of temperature on CdSe/ZnS quantum dots (QDs) in GaN-based light-emitting diodes (LEDs) using the phosphor conversion efficiency (PCE) and LED junction temperature. In our simulation, the blue chip and CdSe/ZnS QDs temperature are similar because of their minimal thickness. Furthermore, to verify the effect of temperature on CdSe/ZnS QDs, we use continuous wave and pulsed current sources to measure the relationship between the temperature and relative PCE. Higher junction temperatures are observed with greater CdSe/ZnS QD volume in LEDs. This is attributed to the thermal conduction and nonradiative energy between CdSe/ZnS QDs and blue chip. Therefore, if thermal management is improved, CdSe/ZnS QDs are expected to be used as color converting material in LEDs.

Keywords

II-VI semiconductors; cadmium compounds; heat conduction; light emitting diodes; phosphors; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; CdSe-ZnS; LED; blue chip; color converting material; continuous wave sources; light emitting diodes; nonradiative energy; phosphor conversion efficiency; pulsed current sources; quantum dots; thermal conduction; thermal effect; thermal management; Color; Educational institutions; Junctions; Light emitting diodes; Phosphors; Quantum dots; Temperature measurement; GaN; Light-emitting diodes (LEDs); phosphor; quantum dots (QDs);

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2012.2195158

Filename

6186747