• DocumentCode
    1498823
  • Title

    High power CW output from low confinement asymmetric structure diode laser

  • Author

    Iordache, G. ; Buda, M. ; Acket, G.A. ; van de Roer, T.G. ; Kaufmann, L.M.F. ; Karouta, F. ; Jagadish, C. ; Tan, H.H.

  • Author_Institution
    Fac. of Electr. Eng., Eindhoven Univ. of Technol., Netherlands
  • Volume
    35
  • Issue
    2
  • fYear
    1999
  • fDate
    1/21/1999 12:00:00 AM
  • Firstpage
    148
  • Lastpage
    149
  • Abstract
    High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 μm wide stripe 1-3 mm long diode lasers were studied. 1.8 W of continuous wave optical power per uncoated facet was obtained at an injection current of 4.7 A (36 mW/μm). The threshold current density is 270-400 A/cm2
  • Keywords
    MOCVD; current density; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1 to 3 mm; 1.8 W; 4.7 A; 50 micron; asymmetric structure diode laser; confinement; continuous wave optical power; gain guided lasers; high power CW output; injection current; metal organic vapour phase epitaxy; optical trap layer; threshold current density; uncoated facet;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990078
  • Filename
    758025
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498823