Title :
Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors
Author :
Höfling, E. ; Werner, R. ; Schäfer, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Tech. Phys., Wurzburg Univ., Germany
fDate :
1/21/1999 12:00:00 AM
Abstract :
Short-cavity edge-emitting lasers with deeply etched distributed Bragg reflectors (DBRs) of third and second order were realised by reactive ion etching on GaInAs/AlGaAs layer structures. Diffraction limited reflectivities were achieved for third order dry etched DBR mirrors. Devices with DBRs on both cavity ends allow lasing operation for cavity lengths as short as 40 μm
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; semiconductor lasers; sputter etching; 40 micron; GaInAs-AlGaAs; diffraction limited reflectivity; distributed Bragg mirror; dry etching; reactive ion etching; short-cavity edge-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990133
