Measurement of III-V quaternary composition using X-ray diffraction

Author

Wallis, D.J. ; Keir, A.M. ; Emeny, M.T. ; Martin, T.

Author_Institution

DERA, Malvern, UK

Volume

148

Issue

2

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

97

Lastpage

100

Abstract

A method is demonstrated for the determination of quaternary compositions using a single X-ray measurement. By comparing the integrated intensity of a reflection with theoretical calculations and combining this with the mismatch of the layer, a solution for the composition can be determined. For the quaternary, InAlAsSb, the intensity of the (002) reflection is shown to depend strongly on composition and allow determination of In:Al and As:Sb ratios. Since the bandgap/composition relationship is not well known for this system, the accuracy of the technique is assessed by measuring InAsSb layers using peak intensities and comparing the calculated composition with that determined using the layer mismatch in the usual way. The values calculated by the two techniques are in good agreement and therefore provide confidence in the quaternary compositions measured

Keywords

III-V semiconductors; X-ray diffraction; aluminium compounds; chemical analysis; energy gap; indium compounds; optical materials; (002) reflection; As:Sb ratios; III-V quaternary composition; In:Al ratios; InAlAsSb; InAsSb; InAsSb layers; X-ray diffraction; bandgap/composition relationship; layer mismatch; peak intensities; reflection;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings -

Publisher

iet

ISSN

1350-2433

Type

jour

DOI

10.1049/ip-opt:20010442

Filename

926825