A Three-Mask-Processed Coplanar a-IGZO TFT With Source and Drain Offsets

Author

Lee, Ung Gi ; Mativenga, Mallory ; Kang, Dong Han ; Jang, Jin

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

33

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

812

Lastpage

814

Abstract

We report a three-mask-processed coplanar amorphous-InGaZnO thin-hlm transistor (TFT) with equal offsets at the source and drain sides. TFTs with offset lengths ranging from 1.5 to 4.0 μm exhibit good switching characteristics with turn-on voltage around -1.6 V, gate swing of ~0.1 V/decade, and on/off current ratio >;10⁵. While gate swing and turn-on voltage are independent of the offset length, the held-effect mobility decreases from 2.4 to 0.5 cm²/V · s as the offset length increases from 1.5 to 4 μm. This coplanar TFT is suitable for cost-effective active-matrix displays with minimal kickback/feedthrough voltage.

Keywords

amorphous semiconductors; gallium compounds; indium compounds; thin film transistors; zinc compounds; InGaZnO; amorphous-InGaZnO thin-film transistor; cost-effective active-matrix displays; drain offset; gate swing; size 1.5 mum to 4 mum; source offset; three-mask-processed coplanar a-IGZO TFT; turn-on voltage; Electrodes; Fabrication; Insulators; Leakage current; Logic gates; Thin film transistors; Amorphous indium–gallium–zinc–oxide (a-IGZO); coplanar; thin-film transistor (TFT); top gate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2190260

Filename

6186769