• DocumentCode
    1498859
  • Title

    High-precision neuron MOSFET structures

  • Author

    Rantala, A. ; Franssila, S. ; Kaski, K. ; Lampinen, J. ; Åberg, M. ; Kuivalainen, P.

  • Author_Institution
    VTT Electron., Finland
  • Volume
    35
  • Issue
    2
  • fYear
    1999
  • fDate
    1/21/1999 12:00:00 AM
  • Firstpage
    155
  • Lastpage
    157
  • Abstract
    Improved structures for neuron MOSFETs, which can execute a weighted summation of multiple input signals, are proposed and tested. Both an additional polysilicon shield and a substrate biasing show good control of the turning point of the neuron MOSFET inverters fabricated using a double poly-CMOS technology. The improved accuracy is demonstrated by fabricating A/D converter circuits utilising the neuron MOSFETs
  • Keywords
    MOSFET; analogue-digital conversion; neural chips; A/D converter circuit; Si; double poly-CMOS technology; neuron MOSFET; polysilicon shield; substrate biasing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990110
  • Filename
    758030
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1498859