Title :
Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes
Author :
Chang, S.J. ; Su, Y.K. ; Chen, J.F. ; Wen, L.F. ; Huang, B.R.
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
4/1/2001 12:00:00 AM
Abstract :
The effects of electron effective mass on the multiquantum barrier (MQB) structure in AlGaInP LD has been systematically studied. Using a new effective mass model, we found that we can achieve an enhanced barrier height of 1.68 U0 or 253 meV. However, such an increase in barrier height is much smaller than the previous reported value obtained using a different electron effective mass model. We also found that the chirped MQB (CMQB) can only enhance the barrier height by 0.276 U0. On the other hand, the enhanced barrier height can reach 2.2 U0 for a properly designed multistack MQB (MSMQB)
Keywords :
III-V semiconductors; aluminium compounds; effective mass; gallium compounds; indium compounds; quantum well lasers; semiconductor device models; 253 meV; AlGaInP; AlGaInP LD; AlGaInP laser diodes; barrier height; chirped MQB; effective mass model; electron effective mass; enhanced barrier height; multiquantum barrier structure; multistack MQB;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20010391
