DocumentCode :
1498918
Title :
Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques
Author :
Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E. ; McMorrow, Dale ; Vizkelethy, Gyorgy ; Ferlet-Cavrois, Véronique ; Gouker, Pascale M. ; Flores, Richard S. ; Stevens, Jeffrey ; Buchner, Stephen B. ; Dalton, Scott M. ; Swanson, Scot E.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
58
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
820
Lastpage :
826
Abstract :
The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back substrates of the diodes were removed by etching with XeF2. With the back substrates removed, the amount of TPA induced charge collection can be correlated to the amount of SPA induced charge collection. There are significant differences, however, in the amount of TPA induced charge collection for diodes with and without substrates. For the SOI diodes of this study, this difference appears to arise from several contributions, including nonlinear-optical losses and distortions that occur as the pulse propagates through the substrate, as well as displacement currents that occur only when the back substrate is present. These results illustrate the complexity of interpreting TPA and SPA single-event upset measurements.
Keywords :
etching; semiconductor device testing; semiconductor diodes; silicon-on-insulator; two-photon processes; xenon compounds; SOI diode; Si; XeF2; charge collection; displacement current; etching; nonlinear-optical distortion; nonlinear-optical loss; pulse propagation; single-event upset measurement; single-photon absorption laser testing technique; two-photon absorption laser testing technique; Charge measurement; Measurement by laser beam; Metals; Semiconductor lasers; Silicon; Substrates; Hardness assurance; heavy-ion testing; laser testing; single-event upset (SEU); threshold LET; two-photon absorption (TPA);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2128345
Filename :
5752885
Link To Document :
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