DocumentCode
1498922
Title
Barrier-width dependence of emission in triple-quantum-well broadband light-emitting diodes
Author
Fritz, I.J. ; Hafich, M.J. ; Klem, J.F. ; Casalnuovo, S.A.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
35
Issue
2
fYear
1999
fDate
1/21/1999 12:00:00 AM
Firstpage
171
Lastpage
172
Abstract
Broadband (1.3-1.9 μm) emission has been demonstrated using triple-quantum-well light-emitting diodes fabricated from InGaAs/InGaAlAs digital alloys. Obtaining comparable emission intensities from the three wells requires careful choice of the barrier-layer thicknesses
Keywords
light emitting diodes; 1.3 to 1.9 micron; InGaAs-InGaAlAs; InGaAs/InGaAlAs digital alloy; barrier width; broadband emission; triple quantum well light emitting diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990068
Filename
758040
Link To Document