DocumentCode :
1498925
Title :
Effect of Ionizing Radiation on Defects and 
Noise in Ge pMOSFETs
Author :
Zhang, Cher Xuan ; Francis, Sarah Ashley ; Zhang, En Xia ; Fleetwood, Daniel M. ; Schrimpf, Ronald D. ; Galloway, Kenneth F. ; Simoen, Eddy ; Mitard, Jerome ; Claeys, Cor
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Volume :
58
Issue :
3
fYear :
2011
fDate :
6/1/2011 12:00:00 AM
Firstpage :
764
Lastpage :
769
Abstract :
The irradiation and annealing responses of Ge pMOSFETs have been investigated under transmission gate bias. Both the radiation-induced charge trapping and the low frequency (1/f) noise increase with total ionizing dose and decrease with annealing time. The smallest increases in noise after irradiation are observed for Ge pMOSFETs with the lowest halo implantation doses. The smallest increases in oxide and interface trap charge densities are obtained for devices with eight monolayers of Si at the interface, as compared to devices with five Si monolayers.
Keywords :
1/f noise; MOSFET; elemental semiconductors; germanium; interface states; radiation hardening (electronics); semiconductor device noise; 1/f noise; Ge; annealing; halo implantation dose; interface trap charge densities; ionizing radiation; low frequency noise; pMOSFET; radiation-induced charge trapping; transmission gate bias; Annealing; Logic gates; MOSFETs; Noise; Radiation effects; Silicon; $1/f$ noise; border traps; germanium; total ionizing dose;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2011.2128347
Filename :
5752886
Link To Document :
