DocumentCode
1499040
Title
A D-Band Passive Imager in 65 nm CMOS
Author
Gu, Qun Jane ; Xu, Zhiwei ; Tang, Adrian ; Chang, Mau-Chung Frank
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL, USA
Volume
22
Issue
5
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
263
Lastpage
265
Abstract
A differential D-band (140 GHz) passive imager has been demonstrated in a 65 nm CMOS technology. It achieves a minimum noise equivalent power of 26 fW/√Hz with peak responsivity of 1.2 MV/W. The core circuit consumes chip area of 950×240 μm2 with dc power consumption of 152 mW. This work further pushes imagers in CMOS technology working towards higher millimeter wave/sub millimeter wave frequencies.
Keywords
CMOS image sensors; millimetre wave integrated circuits; CMOS; core circuit; differential D-band passive imager; frequency 140 GHz; power 152 mW; size 65 nm; CMOS integrated circuits; Foundries; Frequency measurement; Noise; Noise measurement; Radio frequency; Switches; CMOS; d-band; detector; passive Imager;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2012.2192720
Filename
6186796
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