Title :
Contribution to SER Prediction: A New Metric Based on RC Transient Simulations
Author :
Micolau, G. ; Castellani-Coulié, K. ; Aziza, H. ; Portal, J.-M.
Author_Institution :
IMT Technopôle de Château—Gombert, IM2NP-UMR CNRS 6242/UniversitéAix-Marseille, France
Abstract :
This work focuses on speeding up simulation time of SEU systematic detection in a 90 nm SRAM cell. Simulations were run in order to validate a simplified approach based on the injection of a noise source current at the sensitive node of an analytical RC circuit. Moreover, a new SEU reliability metric, mandatory for reliability studies, is introduced. It is based on based on transient I–V simulations.
Keywords :
Analytical models; Integrated circuit modeling; Measurement; Noise; Random access memory; SPICE; Transistors; Noise source currents; SER; SRAM; reliability; single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2190520
