• DocumentCode
    1499054
  • Title

    Contribution to SER Prediction: A New Metric Based on RC Transient Simulations

  • Author

    Micolau, G. ; Castellani-Coulié, K. ; Aziza, H. ; Portal, J.-M.

  • Author_Institution
    IMT Technopôle de Château—Gombert, IM2NP-UMR CNRS 6242/UniversitéAix-Marseille, France
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    797
  • Lastpage
    802
  • Abstract
    This work focuses on speeding up simulation time of SEU systematic detection in a 90 nm SRAM cell. Simulations were run in order to validate a simplified approach based on the injection of a noise source current at the sensitive node of an analytical RC circuit. Moreover, a new SEU reliability metric, mandatory for reliability studies, is introduced. It is based on based on transient I–V simulations.
  • Keywords
    Analytical models; Integrated circuit modeling; Measurement; Noise; Random access memory; SPICE; Transistors; Noise source currents; SER; SRAM; reliability; single event upset;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2190520
  • Filename
    6186798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1499054