DocumentCode :
1499067
Title :
Integration Challenges of Nanoporous Low Dielectric Constant Materials
Author :
Kim, Taek-Soo ; Dauskardt, Reinhold H.
Author_Institution :
Dept. of Mech. Eng., Stanford Univ., Stanford, CA, USA
Volume :
9
Issue :
4
fYear :
2009
Firstpage :
509
Lastpage :
515
Abstract :
The reliable integration of nanoporous low dielectric constant (k) materials is challenging due to their vulnerability to delamination, cohesive cracking, and diffusion. We review selected reliability issues for the integration of nanoporous low-k dielectrics regarding UV curing, diffusion, and damage evolution. Depth-dependent UV curing by the UV standing wave effect is presented. It is demonstrated that significant enhancement in fracture energies at both interfaces of low-k films can be obtained by tailoring UV curing depth profiles and employing the underlying barrier as an optical spacer. The effects of nonionic surfactants on diffusion and damage evolution in nanoporous low-k films are discussed.
Keywords :
curing; dielectric materials; nanoporous materials; UV curing depth profiles; UV standing wave effect; cohesive cracking; damage evolution; depth-dependent UV curing; diffusion; fracture energy; nanoporous low dielectric constant material; nonionic surfactants; optical spacer; Dielectric films; environmental testing; failure; reliability testing; ultraviolet radiation effects;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2009.2033670
Filename :
5286222
Link To Document :
بازگشت