• DocumentCode
    1499068
  • Title

    Generation of electromigration ground rules utilizing Monte Carlo simulation methods

  • Author

    Beitman, Bruce A. ; Ito, Akira

  • Author_Institution
    Harris Semicond., Melbourne, FL, USA
  • Volume
    4
  • Issue
    1
  • fYear
    1991
  • fDate
    2/1/1991 12:00:00 AM
  • Firstpage
    63
  • Lastpage
    66
  • Abstract
    A novel method is presented for determining ground rule limits for the maximum current allowed in a metal line based on the electromigration and process parameters. A Monte Carlo technique is utilized to simulate the distribution of metal width, metal thickness, and electromigration properties to determine the maximum current allowed for a given failure criterion. In linewidths of less than 6 μm, the Monte Carlo method doubles the allowed current compared to the worst-case linewidth approach. Thus, increased currents are allowed in metal lines without sacrificing predetermined reliability goals. It is also demonstrated that the accuracy of the Monte Carlo simulation is based on the number of iterations executed. Specifically, it is shown that the accuracy of the simulation is dependent on the number of outer loop iterations performed
  • Keywords
    Monte Carlo methods; circuit layout CAD; electromigration; metallisation; reliability; Monte Carlo simulation methods; Monte Carlo technique; design rules; distribution of metal width; electromigration ground rules generation; electromigration properties; failure criterion; maximum current allowed; metal thickness; number of outer loop iterations; reliability goals; Electromigration; Furnaces; Geometry; Land surface temperature; Optical films; Pollution measurement; Semiconductor films; Silicon; Temperature measurement; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Semiconductor Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0894-6507
  • Type

    jour

  • DOI
    10.1109/66.75854
  • Filename
    75854