Superconducting properties of TaN and VN films

Author

Pan, V.M. ; Prokhorov, V.G. ; Komashko, V.A. ; Kaminsky, G.G. ; Kousenetsov, M.A. ; Tretiatchenko, C.G.

Author_Institution

Inst. of Metal Phys., Kiev, USSR

Volume

25

Issue

2

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

2000

Lastpage

2003

Abstract

Thin superconducting TaN and VN films produced by reactive cathode sputtering have been investigated. Superconducting-phase-transition smearing in applied field seems to be due to spatial fluctuations of the electron diffusion coefficient as well as dimensional crossover of dynamical superconducting order parameter fluctuations. Flux pinning occurs at grain boundaries by electron scattering mechanism. Transition to a dissipative state is induced by flux line separation from the pins but not by flux line lattice plastic shear

Keywords

fluctuations in superconductors; flux pinning; sputtered coatings; superconducting thin films; superconducting transition temperature; tantalum compounds; type II superconductors; vanadium compounds; TaN; VN; applied field; dimensional crossover; dissipative state; dynamical superconducting order parameter fluctuations; electron diffusion coefficient; electron scattering mechanism; flux line separation; flux pinning; grain boundaries; spatial fluctuations; sputtered superconducting films; superconducting phase transition smearing; Cathodes; Electrons; Fluctuations; Flux pinning; Grain boundaries; Lattices; Pins; Scattering; Sputtering; Superconducting films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92701

Filename

92701