Principles of wet chemical processing in ULSI microfabrication

Author

Kikyuama, Hirohisa ; Miki, Nobuhiro ; Saka, Kiyonori ; Takano, Jun ; Kawanabe, Ichiro ; Miyashita, Masayuki ; Ohmi, Tadahiro

Author_Institution

Hashimoto Chem. Ltd., Osaka, Japan

Volume

4

Issue

1

fYear

1991

fDate

2/1/1991 12:00:00 AM

Firstpage

26

Lastpage

35

Abstract

Fine patterning technology for integrated device manufacturing requires properties such as surface cleanliness, surface smoothness, complete uniformity, and complete etching linearity in wet chemical processing. An improved chemical composition for buffered hydrogen fluoride (BHF:NH₄F+HF+H₂O) is determined based on fundamental research into the chemical reaction mechanism of BHF and SiO ₂. Advanced wet chemical processing based on investigation of chemical reaction mechanisms and properties of liquid chemicals, concentrating on the SiO₂ patterning process by BHF, is described. The principles of wet chemical processing in silicon technology are based on the following: the determination of the dominant reaction (etching) species, the influence of the solubility of the etching products in BHF on etching uniformity and linearity, stability of chemical composition without solid-phase segregation, and an improvement of the wettability of liquid chemicals on the wafer surface by the addition of a surfactant

Keywords

VLSI; etching; integrated circuit manufacture; integrated circuit technology; semiconductor technology; BHF; NH₄F-HF-H₂O; Si technology; SiO₂; SiO₂ patterning process; ULSI microfabrication; buffered HF; buffered hydrogen fluoride; chemical composition; chemical reaction mechanism; complete etching linearity; complete uniformity; etching products; etching uniformity; fine patterning technology; integrated device manufacturing; properties of liquid chemicals; solubility; stability of chemical composition; surface cleanliness; surface smoothness; surfactant; wet chemical processing; wet etching; wettability of liquid chemicals; Chemical processes; Chemical products; Chemical technology; Hydrogen; Linearity; Manufacturing processes; Mechanical factors; Silicon; Ultra large scale integration; Wet etching;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/66.75861

Filename

75861