DocumentCode
1499159
Title
Quantum-Mechanical Charge Distribution in Cylindrical Gate-All-Around MOS Devices
Author
Spinelli, Alessandro S. ; Compagnoni, Christian Monzio ; Maconi, Alessandro ; Amoroso, Salvatore Maria ; Lacaita, Andrea L.
Author_Institution
Dipt. di Elettron. e Inf., Politec. di Milano, Milan, Italy
Volume
59
Issue
7
fYear
2012
fDate
7/1/2012 12:00:00 AM
Firstpage
1837
Lastpage
1843
Abstract
We present a self-consistent 2-D quantum-mechanical model for charge distribution in cylindrical gate-all-around devices with computation of the gate tunneling current. The validity of 1-D approximations for the charge and the gate current is discussed, assessing the validity of a previously proposed analytical approximation for the tunneling current in the Fowler-Nordheim regime.
Keywords
MIS devices; approximation theory; 1D approximations; Fowler-Nordheim regime; charge current; charge distribution; cylindrical gate-all-around MOS devices; gate current; gate tunneling current; self-consistent 2D quantum-mechanical model; Approximation methods; Computational modeling; Logic gates; Mathematical model; Quantization; Substrates; Tunneling; Charge quantization; Fowler-Nordheim (FN) tunneling; gate-all-around (GAA) memories; semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2192275
Filename
6186813
Link To Document