DocumentCode
1499167
Title
Low resistance ohmic contacts to high-T c superconducting thin films
Author
Tazoh, Yasuo ; Aihara, Kimihisa ; Miyabara, Kazunori ; Hohkawa, Kohji ; Oshima, Masaharu
Author_Institution
Electr. Commun. Lab., NTT, Kanagawa, Japan
Volume
25
Issue
2
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
2049
Lastpage
2052
Abstract
Metal contacts to high-T c superconducting thin films have been studied. By analyzing the I -V characteristics at contact junctions and by synchrotron radiation photoemission spectroscopy, the effect of contact metal and surface treatment before depositing contact metal on the metal-superconductor interface characteristics has been investigated. Low-resistance ohmic contacts are realized by the following sequence of processes: (1) oxygen ion sputter etching; (2) high-pressure oxygen plasma treatment, and (3) in situ deposition of Au with no interfacial reaction with the superconductor. A low-contact resistivity equal to 5.5×10-7 Ω-cm2 at 77 K is realized experimentally
Keywords
barium compounds; contact resistance; gold; high-temperature superconductors; ohmic contacts; photoelectron spectra; sputter etching; superconducting thin films; yttrium compounds; 77 K; I-V characteristics; YBa2Cu3Oy-Au; contact junctions; contact metal; high temperature superconductivity; high-Tc superconducting thin films; in situ deposition; ion sputter etching; low resistance ohmic contacts; metal-superconductor interface characteristics; plasma treatment; surface treatment; synchrotron radiation photoemission spectroscopy; Contact resistance; Ohmic contacts; Photoelectricity; Plasma applications; Plasma properties; Spectroscopy; Sputter etching; Superconducting thin films; Surface treatment; Synchrotron radiation;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.92712
Filename
92712
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