DocumentCode :
14993
Title :
Power-area-efficient transient-improved capacitor-free FVF-LDO with digital detecting technique
Author :
Jianping Guo ; Ho, Mantak ; Ka Yee Kwong ; Ka Nang Leung
Author_Institution :
Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China
Volume :
51
Issue :
1
fYear :
2015
fDate :
1 8 2015
Firstpage :
94
Lastpage :
96
Abstract :
A fast-transient capacitor-free low-dropout regulator (LDO) based on a flipped-voltage-follower (FVF) structure has been designed with the proposed digital detecting technique. By increasing the slewing at the gate of the power transistor through detecting the dynamic changes inside the circuit, load-transient recovery time can be decreased by 99.8%. The quiescent current of the proposed LDO is only 3.9 μA under normal operation. In addition, the circuit maintains a small chip area of 0.04 mm2 under 0.18 μm CMOS technology since no large RC components are needed to couple the output voltage spikes.
Keywords :
CMOS analogue integrated circuits; operational amplifiers; transient analysis; voltage regulators; CMOS technology; DDT; current 3.9 muA; digital detecting technique; flipped-voltage-follower structure; load-transient recovery time; low-dropout regulator; output voltage spikes; power transistor; power-area-efficient transient-improved capacitor-free FVF-LDO; size 0.18 mum;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2014.3330
Filename :
7006841
Link To Document :
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