Enhanced Perpendicular Spin Transfer Torque in Magnetic Multilayers With a Capping Layer

Author

Chung, Nyuk Leong ; Jalil, Mansoor B.A. ; Tan, Seng Ghee

Author_Institution

Electr. & Comput. Eng. Dept., Nat. Univ. of Singapore, Singapore, Singapore

Volume

46

Issue

6

fYear

2010

fDate

6/1/2010 12:00:00 AM

Firstpage

1580

Lastpage

1583

Abstract

In this paper, we model the effects of the physical properties of the capping layer, such as spin diffusion length (l_sf ^cap), resistivity (Â¿_cap), and interfacial conductance (G_Â¿ ^cap, G_Â¿ ^cap) on the spin transport across a pseudo-spin-valve (PSV) structure. In particular, we investigate how the properties of the capping layer can be modified in order to enhance the perpendicular component (Â¿_Â¿) of the spin transfer torque vis-aÂ¿-vis the inplane (Â¿_Â¿) component. The results suggest that the capping layer can serve as an effective medium for tuning the ratio of Â¿_Â¿ to Â¿_Â¿ by varying its physical properties.

Keywords

electrical resistivity; magnetic multilayers; spin dynamics; spin polarised transport; spin valves; capping layer; interfacial conductance; magnetic multilayers; perpendicular component; perpendicular spin transfer torque; physical properties; pseudospin-valve structure; resistivity; spin diffusion length; spin transport across; Computer interfaces; Equations; Laboratories; Magnetic materials; Magnetic multilayers; Magnetic switching; Magnetization; Material storage; Physics computing; Torque; Magnetic-film memories; magnetic films; magnetoresistance; spin transfer torque;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2010.2044141

Filename

5467581