Title :
Resonant Switching of Two Dipole-Coupled Nanomagnets
Author :
Cherepov, S.S. ; Korenivski, V. ; Worledge, D.C.
Author_Institution :
Nanostruct. Phys., R. Inst. of Technol., Stockholm, Sweden
fDate :
6/1/2010 12:00:00 AM
Abstract :
The storage layer of recently developed spin-flop magnetic random-access memory consists of two closely spaced dipole-coupled nanomagnets and is highly stable in the ground state as well as in quasistatic fields applied off the easy axis. We show experimentally and confirm by using micromagnetic simulations that these spin-flop bilayers can be switched relatively easily by dynamic fields, applied at the frequency of the optical spin resonance of the bilayer. The field amplitude sufficient for this resonant switching can be an order of magnitude lower than the fields necessary for quasistatic reversal. Our data and micromagnetic analysis suggest that thermal agitation can play a role in the observed resonant switching behavior.
Keywords :
ground states; magnetic switching; magnetisation reversal; micromagnetics; nanomagnetics; dipole-coupled nanomagnets; dynamic fields; field amplitude; micromagnetic analysis; micromagnetic simulations; optical spin resonance; quasistatic fields; quasistatic reversal; resonant switching; spin-flop bilayers; spin-flop magnetic random-access memory ground state; thermal agitation; Frequency; Magnetic analysis; Magnetic memory; Magnetic resonance; Magnetic separation; Magnetic switching; Micromagnetics; Physics; Space technology; Stationary state; Magnetic random-access memory (MRAM); micromagnetic simulations; resonant switching; spin-flop bilayers;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2010.2043715