• DocumentCode
    1499659
  • Title

    Methodology for electromigration critical threshold design rule evaluation

  • Author

    Clement, J. Joseph ; Riege, Stefan P. ; Cvijetic, Radenko ; Thompson, Carl V.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    18
  • Issue
    5
  • fYear
    1999
  • fDate
    5/1/1999 12:00:00 AM
  • Firstpage
    576
  • Lastpage
    581
  • Abstract
    We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design rules for electromigration reliability. The concept underlying critical threshold design rules is the observation that a mechanical stress-induced backflow of metal atoms is created by electromigration in interconnect lines confined by a rigid dielectric. If the steady-state balance of these two atomic fluxes is achieved before critical electromigration damage is realized, then the line can be considered to be virtually immortal with negligible reliability risk. A design rule based on this critical threshold criterion has the potential to give designers added flexibility to use currents larger than present design rules typically allow in short interconnects
  • Keywords
    electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; atomic flux; computer-aided design; critical threshold design rule; electromigration reliability; interconnect line; mechanical stress; nodal analysis; rigid dielectric; Aluminum; Compressive stress; Design automation; Dielectrics; Electric resistance; Electromigration; Electrons; Integrated circuit interconnections; Materials science and technology; Risk analysis;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.759073
  • Filename
    759073