DocumentCode
1499659
Title
Methodology for electromigration critical threshold design rule evaluation
Author
Clement, J. Joseph ; Riege, Stefan P. ; Cvijetic, Radenko ; Thompson, Carl V.
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
18
Issue
5
fYear
1999
fDate
5/1/1999 12:00:00 AM
Firstpage
576
Lastpage
581
Abstract
We propose a methodology using nodal analysis techniques compatible with existing computer-aided design (CAD) tools for implementing critical threshold design rules for electromigration reliability. The concept underlying critical threshold design rules is the observation that a mechanical stress-induced backflow of metal atoms is created by electromigration in interconnect lines confined by a rigid dielectric. If the steady-state balance of these two atomic fluxes is achieved before critical electromigration damage is realized, then the line can be considered to be virtually immortal with negligible reliability risk. A design rule based on this critical threshold criterion has the potential to give designers added flexibility to use currents larger than present design rules typically allow in short interconnects
Keywords
electromigration; integrated circuit design; integrated circuit interconnections; integrated circuit reliability; atomic flux; computer-aided design; critical threshold design rule; electromigration reliability; interconnect line; mechanical stress; nodal analysis; rigid dielectric; Aluminum; Compressive stress; Design automation; Dielectrics; Electric resistance; Electromigration; Electrons; Integrated circuit interconnections; Materials science and technology; Risk analysis;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.759073
Filename
759073
Link To Document