A Dual-Band 10/24-GHz Amplifier Design Incorporating Dual-Frequency Complex Load Matching

Author

Hsieh, Kai-An ; Wu, Hsien-Shun ; Tsai, Kun-Hung ; Tzuang, Ching-Kuang Clive

Author_Institution

Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

60

Issue

6

fYear

2012

fDate

6/1/2012 12:00:00 AM

Firstpage

1649

Lastpage

1657

Abstract

This paper presents a comprehensive theory of a dual-frequency complex load-matching technique based on transmission lines. The theoretical analysis is insightfully described, and the applicable regions of the design equations are specified. To substantiate the theory, a corresponding methodology is proposed to design a dual-band 10/24-GHz amplifier, which is fabricated by standard 0.13-μm 1P8M CMOS technology. This amplifier involves synthetic quasi-TEM transmission lines to build the dual-frequency matching circuits. The comparisons between simulations and on-wafer measurements are reported to establish the feasibility and flexibility of the presented technique in microwave applications.

Keywords

CMOS integrated circuits; MMIC amplifiers; field effect MMIC; transmission lines; CMOS technology; dual band MMIC amplifier design; dual frequency complex load matching; dual frequency matching circuits; frequency 10 GHz; frequency 24 GHz; on-wafer measurements; size 0.13 mum; synthetic quasi-TEM transmission lines; Design methodology; Dual band; Equations; Impedance; Power transmission lines; Radio frequency; Amplifier; CMOS; complex load matching; dual frequency; transmission line;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2191303

Filename

6187674