DocumentCode :
1499979
Title :
Interlayer Exchange Coupling in Full Heusler \\hbox {Co}_{2}\\hbox {FeSi/Cr/Co}_{2}\\hbox {FeSi} Epitaxial Trilayer Structures
Author :
Bosu, Subrojati ; Sakuraba, Yuya ; Saito, Kesami ; Wang, Hai ; Takanashi, Koki
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Volume :
46
Issue :
6
fYear :
2010
fDate :
6/1/2010 12:00:00 AM
Firstpage :
2052
Lastpage :
2055
Abstract :
Interlayer exchange coupling was investigated in Co2FeSi(20 nm)/Cr(tCr = 0.6 to 3 nm)/Co2FeSi(7 nm) epitaxial trilayer structures by M - H loop measurement and using a numerical simulation method. The epitaxial growth and the presence of partial B2 ordering in Co2FeSi films were confirmed from the XRD patterns. The bilinear coupling parameter J1 and 90° coupling parameter J2 were determined from the numerical simulation of M - H loops for trilayers. The absence of 180° coupling and the presence of dominating 90° coupling were observed from the comparison between the numerical simulations and measured M - H loops within a wide range of spacer thickness. The strength of the 90° coupling was found to vary with the spacer thickness and only a peak of J2 was observed at tCr = 1.2 nm.
Keywords :
X-ray diffraction; chromium alloys; cobalt alloys; epitaxial growth; exchange interactions (electron); iron alloys; magnetic epitaxial layers; magnetic multilayers; metallic epitaxial layers; numerical analysis; silicon alloys; Co2FeSi-Cr-Co2FeSi; M-H loop measurement; XRD patterns; bilinear coupling parameter; epitaxial growth; epitaxial trilayer structure; full-Heusler alloy; interlayer exchange coupling; numerical simulation; partial B2 ordering; spacer thickness; Annealing; Chromium; Collision mitigation; Giant magnetoresistance; IEC standards; Iron alloys; Numerical simulation; Sputtering; Temperature; X-ray scattering; 90$^{circ}$ coupling; $B2$ ordering; ${rm Co}_{2}{rm FeSi}$; full-Heusler alloy; interlayer exchange coupling;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2010.2045642
Filename :
5467678
Link To Document :
بازگشت