A Modified Doherty Power Amplifier With Extended Bandwidth and Reconfigurable Efficiency

Author

Gustafsson, David ; Andersson, Christer M. ; Fager, Christian

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

Volume

61

Issue

1

fYear

2013

fDate

Jan. 2013

Firstpage

533

Lastpage

542

Abstract

This paper derives the theory and presents measurements of a new power amplifier based on the Doherty power amplifier topology. It is theoretically shown that the proposed amplifier can simultaneously provide high efficiency at both full output power and at output power back-off, over a much improved bandwidth compared to the conventional Doherty power amplifier. It is also shown that the proposed amplifier allows reconfiguration of the efficiency in power back-off without the need of tunable elements.

Keywords

III-V semiconductors; gallium compounds; power amplifiers; wide band gap semiconductors; GaN; extended bandwidth; modified Doherty power amplifier; power back-off; reconfigurable efficiency; Bandwidth; Frequency dependence; Impedance; Peak to average power ratio; Power amplifiers; Power generation; Transistors; Broadband amplifiers; Doherty; GaN; gallium nitride; high efficiency; power amplifiers; wideband;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2012.2227783

Filename

6403589