Title :
A novel CMOS VLSI isolation technology using selective chlorine implantation
Author :
Pfiester, James R. ; Alvis, John R.
Author_Institution :
Motorola Inc., Austin, TX, USA
Abstract :
An isolation technology that uses blanket boron and selective chlorine n-well implantation prior to field oxidation is proposed. Chlorine implantation results in an increase in the thermal-oxidation linear-reaction-rate coefficient by a factor of 11.5, which enhances the segregation of dopant atoms in the n-well field region. Due to the redistribution of dopant atoms in the n-well field region, the field threshold voltage magnitude may be increased by as much as 20 V when chlorine implantation is used.<>
Keywords :
CMOS integrated circuits; VLSI; integrated circuit technology; ion implantation; oxidation; CMOS VLSI; Si:B,Cl; blanket B implantation; dopant atom redistribution; dopant atom segregation; field threshold voltage magnitude; isolation technology; linear-reaction-rate coefficient; n-well field region; n-well implantation; selective Cl implantation; thermal-oxidation; Boron; CMOS technology; Implants; Isolation technology; MOS devices; Oxidation; Resists; Thermal factors; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Device Letters, IEEE
