Title :
Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates
Author :
Simhony, S. ; Kapon, E. ; Colas, E. ; Bhat, R. ; Stoffel, N.G. ; Hwang, D.M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
Structure and lasing characteristics of double-quantum-wire lasers are reported. Threshold current as low as 2.4 mA and continuous wave operation at room temperature were achieved for lasers with uncoated facets. Subbands due to lateral quantum confinement were observed in the laser spectra. Good agreement between measured dependence of threshold current on cavity length and a simple model accounting for gain saturation was found.<>
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 2.4 mA; GaAs-AlGaAs; LW lasing; cavity length; diode lasers; double-quantum-wire lasers; gain saturation; grooved substrates; laser spectra; lasing characteristics; lateral quantum confinement; organometallic chemical vapor deposition; room temperature; threshold current; uncoated facets; Current measurement; Diode lasers; Gain measurement; Gallium arsenide; Laser modes; Length measurement; Potential well; Temperature; Threshold current; Wire;
Journal_Title :
Photonics Technology Letters, IEEE
