Double quantum wire GaAs/AlGaAs diode lasers grown by organometallic chemical vapor deposition on grooved substrates

Author

Simhony, S. ; Kapon, E. ; Colas, E. ; Bhat, R. ; Stoffel, N.G. ; Hwang, D.M.

Author_Institution

Bellcore, Red Bank, NJ, USA

Volume

2

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

305

Lastpage

306

Abstract

Structure and lasing characteristics of double-quantum-wire lasers are reported. Threshold current as low as 2.4 mA and continuous wave operation at room temperature were achieved for lasers with uncoated facets. Subbands due to lateral quantum confinement were observed in the laser spectra. Good agreement between measured dependence of threshold current on cavity length and a simple model accounting for gain saturation was found.<>

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 2.4 mA; GaAs-AlGaAs; LW lasing; cavity length; diode lasers; double-quantum-wire lasers; gain saturation; grooved substrates; laser spectra; lasing characteristics; lateral quantum confinement; organometallic chemical vapor deposition; room temperature; threshold current; uncoated facets; Current measurement; Diode lasers; Gain measurement; Gallium arsenide; Laser modes; Length measurement; Potential well; Temperature; Threshold current; Wire;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.54687

Filename

54687