Quasi-planar monolithic integration of high-speed VCSEL and resonant enhanced photodetector arrays

Author

Alduino, A.C. ; Luong, S.Q. ; Zhou, Y. ; Hains, C.P. ; Cheng, James

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

11

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

512

Lastpage

514

Abstract

We describe the quasi-planar monolithic integration of oxide-confined vertical-cavity surface-emitting laser (VCSEL) and resonant enhanced photodetector (REPD) arrays. These high speed devices are fabricated using an approach in which current apertures with a range of different sizes are formed by concatenating a number of discrete crescent shaped oxidation fronts. This approach preserves planarity while improving dimensional control for devices with very small oxide apertures (<4 μm). It resulted in VCSEL´s with electrical and optical characteristics that are comparable to those of etched-mesa devices, while producing high-speed REPD´s with a rise time of /spl sim/65 ps.

Keywords

high-speed optical techniques; integrated optoelectronics; oxidation; photodetectors; semiconductor laser arrays; surface emitting lasers; 4 mum; 65 ps; current apertures; dimensional control; discrete crescent shaped oxidation fronts; electrical characteristics; etched-mesa devices; high speed devices; high-speed VCSEL; optical characteristics; oxide-confined vertical-cavity surface-emitting laser; quasi-planar monolithic integration; resonant enhanced photodetector arrays; rise time; very small oxide apertures; Apertures; High speed optical techniques; Monolithic integrated circuits; Optical arrays; Optical devices; Oxidation; Photodetectors; Resonance; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.759382

Filename

759382