Title :
Frequency tuning of a GaAs semiconductor laser locked to the optogalvanic signal of argon by use of the Zeeman effect
Author :
Yamaguchi, Shizuo ; Suzuki, Masao
Author_Institution :
Dept. of Electron. Eng., Tokyo Inst. of Polytech., Kanagawa, Japan
fDate :
5/1/1990 12:00:00 AM
Abstract :
The frequency of a GaAs semiconductor laser, locked to the optogalvanic signal corresponding to the 4s/sub 11/-4p/sub 12/ transition of Ar, was tuned in the frequency range of +or-1.75 GHz by use of the Zeeman effect. The observed tuning factor of 1.60 MHz/G agreed with that calculated from the g factor in jj-coupling at a weak field case. The frequency-locking was accomplished by using a frequency discriminator obtained by Zeeman modulation.<>
Keywords :
III-V semiconductors; Zeeman effect; gallium arsenide; laser mode locking; optical modulation; semiconductor junction lasers; 4s/sub 11/-4p/sub 12/ transition; Ar; GaAs semiconductor laser; Zeeman effect; Zeeman modulation; frequency discriminator; frequency range; frequency-locking; g factor; jj-coupling; laser frequency tuning; optogalvanic signal; tuning factor; weak field case; Argon; Frequency; Gallium arsenide; Lamps; Laser beams; Laser feedback; Laser transitions; Laser tuning; Magnetic fields; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
