Title :
Tradeoff between phase- and intensity modulation in GaAs/AlGaAs double heterostructure and multiple quantum well phase-modulator waveguides
Author :
Valliath, G.T. ; Lengyel, G. ; Wolf, H.D. ; Korte, L. ; Kristen, G.
Author_Institution :
Dept. of Electr. Eng., Rhode Island Univ., Kingston, RI, USA
fDate :
5/1/1990 12:00:00 AM
Abstract :
The wavelength dependence of phase sensitivity ( degrees /mm V) and intensity modulation of a double-heterostructure (DH) device and a multiquantum-well (MQW) device in the GaAs/AlGaAs material system is studied. The results show the tradeoff between phase modulation and intensity modulation and also show that, for the same intensity modulation, the MQW device produces twice as much phase modulation as the DH device. For example, at an intensity modulation of -1 dB the MQW device has a phase sensitivity of 120 degrees /mm V while the DH device gives a value of approximately=60 degrees /mm V.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; optical modulation; optical waveguides; phase modulation; semiconductor quantum wells; sensitivity; GaAs-AlGaAs; double heterostructure; intensity modulation; multiple quantum well phase-modulator waveguides; optical modulation; phase modulation; phase sensitivity; wavelength dependence; DH-HEMTs; Gallium arsenide; Intensity modulation; Low earth orbit satellites; Optical waveguides; PIN photodiodes; Phase modulation; Photonic band gap; Quantum well devices; Semiconductor materials;
Journal_Title :
Photonics Technology Letters, IEEE
