Title :
Polarization-independent waveguide modulators using 1.57-μm /spl delta/-strained InGaAs-InGaAsP quantum wells
Author :
Bartolo, R.E. ; Saini, S.S. ; Ren, T. ; Zhu, Y. ; Dagenais, M. ; Shen, H. ; Pamulapati, J. ; Zhou, W. ; King, O. ; Jonson, F.G.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
5/1/1999 12:00:00 AM
Abstract :
We fabricated a multiple-quantum-well waveguide modulator incorporating two tensile S-strained layers, within a nominally lattice matched well, that act to provide bias-independent Stark shift for both the light and heavy holes. We report results for two waveguide geometries. One is a 2.3-μm-wide ridge single-mode waveguide that was deep-etched 0.7 μm below the active region to ensure that the confinement factor for both the TE and TM modes are nearly equal. The other was a broad-area (slab) multimode waveguide. For both geometries, transmission measurements indicate polarization insensitivity within 3 dB for 2.5 V of reverse bias over the 1.600-1.630-μm wavelength range.
Keywords :
III-V semiconductors; electro-optical modulation; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical waveguides; semiconductor device models; semiconductor quantum wells; /spl delta/-strained InGaAs-InGaAsP quantum wells; 1.57 mum; 1.600 to 1.630 mum; 2.3 mum; 2.5 V; InGaAs-InGaAsP; TE modes; TM modes; active region; bias-independent Stark shift; broad-area slab multimode waveguide; confinement factor; deep-etched; geometries; heavy holes; light holes; multiple-quantum-well waveguide modulator; nominally lattice matched well; polarization insensitivity; polarization-independent waveguide modulators; reverse bias; ridge single-mode waveguide; tensile S-strained layers; transmission measurements; waveguide geometries; Absorption; Delta modulation; Effective mass; Energy states; Lattices; Optical modulation; Optical waveguides; Polarization; Quantum well devices; Tellurium;
Journal_Title :
Photonics Technology Letters, IEEE
