Chemi-physical diagnosis of BiSrCaCuO thin film preparation

Author

Kobayashi, Takeshi ; Fukumoto, Yoshito ; Hidaka, Hiroaki ; Tonouchi, Masayoshi

Author_Institution

Fac. of Eng. Sci., Osaka Univ., Japan

Volume

25

Issue

2

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

2455

Lastpage

2458

Abstract

Thin film and bulk formation of the new high T_c superconductive oxide BiSrCaCuO (BSCCO) and related crystal structures has been investigated, emphasizing the beneficial effect of Mg addition on the superconductivity. The onset temperature of the high T_c phase was raised by a few degrees, and a T_c (zero) higher than 100 K was easy to obtain in the BiSrCaMgCuO system. The as-grown BSCCO thin film formation is also considered. Sputter-deposited to 48 K without using postanneal. After the film was subjected to the furnace anneal, T _c (zero) rose to 90 K, though most of the resistance dropped at even higher temperatures. The structural change and chemical shift introduced during the postanneal have been closely examined, showing that sensitivity of the BSCCO crystallinity to the substrate material, annealing time, and temperatures. These characteristic features seem substantially different from those of YBCO system

Keywords

annealing; bismuth compounds; calcium compounds; high-temperature superconductors; magnesium compounds; sputter deposition; strontium compounds; superconducting thin films; superconducting transition temperature; 100 K; 48 to 90 K; BiSrCaCuO; BiSrCaMgCuO system; Mg addition; annealing time; as-grown BSCCO thin film formation; bulk formation; chemi-physical diagnostics; chemical shift; crystallinity; furnace anneal; high temperature superconductor; onset temperature; postanneal; sputtered films; structural change; thin film preparation; zero temperature; Annealing; Bismuth compounds; Chemicals; Crystallization; Furnaces; Sputtering; Superconducting thin films; Superconductivity; Temperature sensors; Transistors;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92804

Filename

92804