Title :
Latch-back-free self-aligned power MOSFET structure with silicided source and body contact
Author :
Koh, Yo-Hwan ; Kim, Choong-ki
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea
Abstract :
A self-aligned vertical double-diffused power MOSFET structure with a very small source region formed by outdiffusion of phosphorous from the sidewall phosphosilicate glass (PSG) is proposed. The proposed structure eliminates the latch-back phenomena and also reduces the chip area. The first experimental results of the proposed structure fabricated with the mask set for a conventional device show latch-back-free I-V characteristics.<>
Keywords :
insulated gate field effect transistors; power transistors; I-V characteristics; body contact; chip area; latch-back phenomena; mask set; outdiffusion; self-aligned vertical double-diffused power MOSFET; sidewall phosphosilicate glass; silicided source; source region; Artificial intelligence; Bipolar transistors; Electric resistance; Etching; Glass; Immune system; MOSFET circuits; Power MOSFET; Resistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
