A new polarization-insensitive 1.55-μm InGaAsP-InGaAsP multiquantum-well electroabsorption modulator using a strain-compensating layer

Author

Chung, Ku-Ho ; Shim, Jong-In

Author_Institution

Dept. of Electron. Eng., Hanyang Univ., Ansan, South Korea

Volume

35

Issue

5

fYear

1999

fDate

5/1/1999 12:00:00 AM

Firstpage

730

Lastpage

736

Abstract

In a conventional polarization-insensitive multiquantum-well electroabsorption modulator, it is normal to apply tensile and compressive strain on the well and the barrier, respectively. But the main disadvantages of such a structure are a low conduction band offset (0.04-0.06 eV), a high heavy-hole band offset (0.20-0.24 eV), and a relatively large well thickness (110-120 Å). We propose a new method of overcoming these disadvantages by placing a tensile strain on both the well and the barrier and compensating for them with a compressive strained intrinsic layer

Keywords

III-V semiconductors; conduction bands; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical communication equipment; 0.04 to 0.06 eV; 0.2 to 0.24 eV; 1.55 mum; 110 to 120 A; InGaAsP-InGaAsP; compressive strain; compressive strained intrinsic layer; high heavy-hole band offset; large well thickness; low conduction band offset; polarization-insensitive InGaAsP-InGaAsP multiquantum-well electroabsorption modulator; strain-compensating layer; tensile strain; Absorption; Capacitive sensors; Epitaxial growth; Extinction ratio; Optical modulation; Optical polarization; Optical receivers; Potential well; Quantum well devices; Tensile strain;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.760319

Filename

760319