• DocumentCode
    1500827
  • Title

    Characterization of Nb/AlOx-Al/Nb junction structures by anodization spectroscopy

  • Author

    Imamura, Takeshi ; Hasuo, Shinya

  • Author_Institution
    Fujitsu Ltd., Atsugi, Japan
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • fDate
    3/1/1989 12:00:00 AM
  • Firstpage
    1131
  • Lastpage
    1134
  • Abstract
    The thin tunneling barrier in a Nb/AlOx-Al/Nb Josephson junction was characterized by anodization spectroscopy. Nb/AlOx and Al/Nb interfaces made by varying certain process parameters were examined. The interface quality is greatly affected by film thickness, layer sequence, annealing, and existence of a thin oxide. It is concluded that anodization spectroscopy is a useful technique to diagnose the tunneling barrier in the Nb/AlOx-Al/Nb Josephson junctions during fabrication processes
  • Keywords
    Josephson effect; aluminium; aluminium compounds; annealing; anodisation; niobium; spectroscopy; superconducting junction devices; type II superconductors; Josephson junction; Nb-AlOx-Al-Nb; Nb/AlOx-Al/Nb junction structures; annealing; anodization spectroscopy; fabrication; film thickness; interface quality; layer sequence; process parameters variation; superconducting junctions; thin oxide; thin tunneling barrier; Computer industry; Josephson junctions; Monitoring; Niobium; Nonhomogeneous media; Passivation; Spectroscopy; Sputtering; Substrates; Tunneling;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92840
  • Filename
    92840