DocumentCode
1500827
Title
Characterization of Nb/AlOx-Al/Nb junction structures by anodization spectroscopy
Author
Imamura, Takeshi ; Hasuo, Shinya
Author_Institution
Fujitsu Ltd., Atsugi, Japan
Volume
25
Issue
2
fYear
1989
fDate
3/1/1989 12:00:00 AM
Firstpage
1131
Lastpage
1134
Abstract
The thin tunneling barrier in a Nb/AlOx-Al/Nb Josephson junction was characterized by anodization spectroscopy. Nb/AlOx and Al/Nb interfaces made by varying certain process parameters were examined. The interface quality is greatly affected by film thickness, layer sequence, annealing, and existence of a thin oxide. It is concluded that anodization spectroscopy is a useful technique to diagnose the tunneling barrier in the Nb/AlOx-Al/Nb Josephson junctions during fabrication processes
Keywords
Josephson effect; aluminium; aluminium compounds; annealing; anodisation; niobium; spectroscopy; superconducting junction devices; type II superconductors; Josephson junction; Nb-AlOx-Al-Nb; Nb/AlOx-Al/Nb junction structures; annealing; anodization spectroscopy; fabrication; film thickness; interface quality; layer sequence; process parameters variation; superconducting junctions; thin oxide; thin tunneling barrier; Computer industry; Josephson junctions; Monitoring; Niobium; Nonhomogeneous media; Passivation; Spectroscopy; Sputtering; Substrates; Tunneling;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.92840
Filename
92840
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